Temperature dependence of pin solar cell parameters with intrinsic layers made of pm-Si:H and low crystalline volume fraction μc-Si:HHAMADEH, H.Renewable energy. 2010, Vol 35, Num 7, pp 1419-1423, issn 0960-1481, 5 p.Article

Characterization of Zn_(1-y)Mg_yS_xSe_(1-x) epilayers grown by low-pressure metalorganic vapour phase epitaxyHAMADEH, H; SÖLLNER, J; SCHMORANZER, J et al.Journal of crystal growth. 1996, Vol 158, Num 1-2, pp 89-96, issn 0022-0248Article

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illuminationHAMADEH, H; NADDAF, M; JAZMATI, A et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 24, issn 0022-3727, 245108.1-245108.5Article

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode dischargeNADDAF, M; SALOUM, S; HAMADEH, H et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 13, pp 4015-4020, issn 0022-3727, 6 p.Article

Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPEGURSKII, A. L; LUTSENKO, E. V; YABLONSKII, G. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 22-25, issn 0921-5107Conference Paper

Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursorGURSKII, A. L; TAUDT, W; LAMPE, S et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 533-536, issn 0022-0248Conference Paper

Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy systemTAUDT, W; XU, J; HARDT, A et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 663-672, issn 0022-0248Article

Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayersGURSKII, A. L; GAVRILENKO, A. N; LUTSENKO, E. V et al.Physica status solidi. B. Basic research. 1996, Vol 193, Num 1, pp 257-267, issn 0370-1972Article

Facteurs génétiques déterminant les variations anatomiques de la prostate = Genetic determinants of anatomical variants of the prostateHAMADEH, H; LARRE, S; AZZOUZI, A.-R et al.Progrès en urologie (Paris). 2008, Vol 18, Num 4, pp 214-222, issn 1166-7087, 9 p.Article

Characterization of ZnMgSSe/ZnSe quantum wells grown by MOVPEHAMADEH, H; LÜNENBÜRGER, M; KALISCH, H et al.Journal of crystal growth. 1998, Vol 184-85, pp 867-871, issn 0022-0248Conference Paper

Metalorganic chemical vapor epitaxy and doping of ZnMgSSe heterostructures for blue emitting devicesHEUKEN, M; SÖLLNER, J; TAUDT, W et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 30-38, issn 0022-0248Conference Paper

Orientation of adsorbed ethylene oxide on Ni(110) by X-ray photoelectron diffractionGROSCHE, U; HAMADEH, H; KNAUFF, O et al.Surface science. 1993, Vol 281, Num 3, pp L341-L346, issn 0039-6028Article

A comparative study of the near band edge luminescence of epitaxial ZnSe:N grown by MBE and MOVPEGURSKII, A. L; HAMADEH, H; KALISCH, H et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 333-337, issn 0370-1972Conference Paper

ZnSe:Sb/ZnSe:Cl heteroepitaxial LED grown by MOVPEKALISCH, H; HAMADEH, H; RÜLAND, R et al.Journal of crystal growth. 2000, Vol 214-15, pp 1163-1165, issn 0022-0248Conference Paper

Structural characterization of MOVPE grown ZnMgSSe/ZnSe heterostructures by HRXRDXU, J; LÜNENBÜGER, D. M; KALISCH, H et al.Journal of crystal growth. 1998, Vol 184-85, pp 134-138, issn 0022-0248Conference Paper

Optically-pumped lasing of doped ZnSe epitaxial layers grown by metal-organic vapour-phase epitaxyYABLONSKII, G. P; GURSKII, A. L; LUTSENKO, E. V et al.Physica status solidi. A. Applied research. 1997, Vol 159, Num 2, pp 543-557, issn 0031-8965Article

Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxyTAUDT, W; LAMPE, S; SAUERLÄNDER, F et al.Journal of crystal growth. 1996, Vol 169, Num 2, pp 243-249, issn 0022-0248Article